发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for precisely connecting lower layer wiring and a contact. SOLUTION: A semiconductor device is provided with lower layer wirings 4a and 4b which are formed on a principal surface of a semiconductor substrate 1, interlayer insulating films 9 which are formed between lower layer wiring 4a and lower layer wiring 4b and on lower layer wirings 4a and 4b, upper layer wiring 10 formed on the interlayer insulating film 9, a contact 8a which electrically connects lower layer wiring 4a and upper layer wiring 10, and a contact 8b which electrically connects lower layer wiring 4b and upper layer wiring 10. The contact 8a is electrically connected on a side of lower layer wiring 4a, and the contact 8b is electrically connected on a side of lower layer wiring 4b. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278599(A) 申请公布日期 2006.10.12
申请号 JP20050093573 申请日期 2005.03.29
申请人 RENESAS TECHNOLOGY CORP 发明人 KOGA TAKUYA
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
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