发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a method which can transfer an integrated circuit including a TFT to a flexible substrate in a shorter time than in a conventional method and can manufacture a semiconductor device with a high yield at low cost. SOLUTION: Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while the etching gas is blown to the peeling layer in the atmosphere of the etching gas for the peeling layer. Specifically, the etching gas is blown to a portion to be peeled while a layer to be peeled is removed from a substrate. Alternatively, peeling is performed in an etchant for the peeling layer while supplying a fresh etchant to the peeling layer. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2006279031(A) |
申请公布日期 |
2006.10.12 |
申请号 |
JP20060054820 |
申请日期 |
2006.03.01 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SUGIYAMA EIJI;MICHIMAE YOSHITAKA;FUKUMOTO YUMIKO;KUWABARA HIDEAKI;YAMAZAKI SHUNPEI |
分类号 |
H01L27/12;H01L21/02;H01L21/336;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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