SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR LASER GYRO USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a emission wavelength that is shorter than 1.1μm. SOLUTION: A semiconductor laser has an active layer 6. The active layer 6 includes six quantum dot layers 61 and five spacer layers 62. The six quantum dot layers 61 and the five spacer layers 62 are laminated alternately. Each of the five spacer layers 62 is made of undoped GaAs and has a film thickness of 30-50 nm. Each of the six quantum dot layers 61 comprises quantum dot 611 and a cap layer 612. The cap layer 611 is made of InyAl1-yAs (y=0.5-0.9). The cap layer 612 is made of AlxGa1-xAs (x=0.0-0.5). The quantum dot 611 is formed by crystal growing on InyAl1-yAs of 1.8-2.4 monolayers. COPYRIGHT: (C)2007,JPO&INPIT