发明名称 POTTASIUM NIOBATE DEPOSIT AND ITS MANUFACTURING METHOD, SURFACE ACOUSTIC WAVE ELEMENT, FREQUENCY FILTER, OSCILLATOR, ELECTRONIC CIRCUIT, AND ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a potassium niobate deposit having a thin film of potassium niobate and its manufacturing method. <P>SOLUTION: The potassium niobate deposit 100 includes an R surface sapphire substrate 11, a buffer layer 12 formed on the R surface sapphire substrate 11 and consisting of a metal oxide, a lead zirconate titanate niobate (PZTN) layer 13 formed on the buffer layer 12, and a potassium niobate layer 14 or a potassium niobate solid solution layer formed on the lead zirconate titanate niobate (PZTN) layer 13. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278870(A) 申请公布日期 2006.10.12
申请号 JP20050097976 申请日期 2005.03.30
申请人 SEIKO EPSON CORP 发明人 HIGUCHI AMAMITSU;KIJIMA TAKESHI;UENO MAYUMI
分类号 H03B5/30;C01G33/00;H01L41/09;H01L41/22;H01L41/316;H01L41/319;H03H9/145;H03H9/25;H03H9/64 主分类号 H03B5/30
代理机构 代理人
主权项
地址