| 摘要 |
PROBLEM TO BE SOLVED: To easily and positively obtain an ideal step profile in a channel region, and to attain both the suppression of a short channel effect and deterioration in mobility. SOLUTION: A part from a semiconductor film 9 to a predetermined depth D in a silicon substrate 1 is made amorphous, and impurities serving as a source and a drain are introduced in this state. Then, the impurities are activated and an amorphous portion is re-crystallized by a low-temperature solid phase epitaxial growth method. A processing temperature required for this low-temperature solid phase epitaxial growth method is about 450°C-650°C, the thermal diffusion of the impurities into the semiconductor film 9 is suppressed, and an initial steep step profile can be maintained. COPYRIGHT: (C)2007,JPO&INPIT
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