| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device of a hot wall type which performs selective growth for an epitaxial film comprising Si in an Si surface of a product substrate at a lower cost. SOLUTION: In the substrate processing device of a hot wall type for performing selective growth for an epitaxial film comprising Si in an Si surface 132 of a product substrate 131, a dummy member 133 having a surface facing at least the peripheral part of the product substrate 131 is disposed in the upper side of the surface 132 for performing selective growth for the product substrate via a clearance, and an epitaxial film comprising Si is subjected to selective growth on the product substrate by providing an irregular part 137 in at least a periphery of the surface 135 facing the surface for selective growth of the product substrate of the dummy member 133. COPYRIGHT: (C)2007,JPO&INPIT
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