发明名称 Fabrication method of epitaxial semiconductor substrate, fabrication method of image sensor using the same, epitaxial semiconductor substrate and image sensor using the same
摘要 <p>In an example embodiment of the method of manufacturing an epitaxial semiconductor substrate, a gettering layer is grown over a semiconductor substrate. An epitaxial layer may then be formed over the gettering layer, and a semiconductor device may be formed on the epitaxial layer.</p>
申请公布号 KR100632463(B1) 申请公布日期 2006.10.11
申请号 KR20050011459 申请日期 2005.02.07
申请人 发明人
分类号 H01L21/20;H01L27/146 主分类号 H01L21/20
代理机构 代理人
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