Method of manufacturing transistor having germanium implant region on the sidewalls of the polysilicon gate electrode

摘要

The present invention provides a transistor 100 having a germanium implant region 170 located therein, a method of manufacture therefor, and an integrated circuit including the aforementioned transistor. The transistor 100 , in one embodiment, includes a polysilicon gate electrode 140 located over a semiconductor substrate 110 , wherein a sidewall of the polysilicon gate electrode 140 has a germanium implanted region 170 located therein. The transistor 100 further includes source/drain regions 160 located within the semiconductor substrate 110 proximate the polysilicon gate electrode 140.