| 摘要 |
PURPOSE:To obtain a P-type amorphous silicon carbide layer with a high dark current conductivity, a high photoconductivity, a low resistance and a large optical band gap by a method wherein silicon hydride and trimethylboron or triethylboron are employed as raw gases and the radio frequency power of a glow discharge is 1mW/cm<2>-100mW/cm<2> on the surface of a substrate. CONSTITUTION:When raw gases are decomposed by a plasma produced by a glow discharge to form a P-type amorphous silicon carbide layer on a substrate 7, silicon hydride 4 and trimethylboron or triethylboron 5 are employed as the raw gases and the radio frequency power of the glow discharge is 1mW/ cm<2>-100mW/cm<2> on the surface of the substrate 7. With this constitution, the P-type amorphous silicon carbide layer with an improved conductivity, a low resistance and a large optical band gap can be formed.
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