Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof

摘要

A monolithically integrated circuit comprises a thin film resistor ( 8 ) with low resistance and low temperature coefficient; a high frequency lateral power transistor device ( 9 ) including gate ( 17 ), source ( 16 ) and drain ( 15 ) regions, and a Faraday shield layer region ( 22; 22 ') above the gate region; and at least a first metallization layer ( 28 ) there above for electrical connection of the gate ( 17 ), source ( 16 ) and drain ( 15 ) regions through via holes filled with conductive material ( 29 c-d). The thin film resistor ( 8 ) and the Faraday shield layer region ( 22; 22 ') are made in the same conductive layer, which is arranged below the first metallization layer ( 28 ).