发明名称 |
Lateral bipolar transistor with additional ESD implant |
摘要 |
A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14). |
申请公布号 |
EP1708274(A2) |
申请公布日期 |
2006.10.04 |
申请号 |
EP20060110965 |
申请日期 |
2006.03.10 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHNEIDER, JENS;WENDEL, MARTIN |
分类号 |
H01L29/735;H01L27/02;H01L29/10 |
主分类号 |
H01L29/735 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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