发明名称 |
Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device |
摘要 |
A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. A programming circuit operates in a first programming mode followed by a second programming mode. In the first programming mode, the programming circuit applies a first program pulse to first memory cells while progressively increasing a programming capability of the first program pulse until threshold voltages of the first memory cells become higher than or equal to a first reference voltage. In the second programming mode, the programming circuit applies a second program pulse to second memory cells included in the first memory cells and having threshold voltages lower than a second reference voltage that is higher than the first reference voltage until the threshold voltages of the second memory cells become higher than or equal to the second reference voltage.
|
申请公布号 |
US7116581(B2) |
申请公布日期 |
2006.10.03 |
申请号 |
US20050059382 |
申请日期 |
2005.02.17 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
SUZUKI JUNICHI;KANAMORI KOHJI |
分类号 |
G11C16/02;G11C16/04;G11C11/34;G11C16/06;G11C16/10;G11C16/12;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|