发明名称 Test circuit for testing a synchronous memory circuit
摘要 Test circuit for testing a synchronous memory circuit having a frequency multiplication circuit which multiplies a clock frequency of a low-frequency clock signal received from an external test unit by a particular frequency multiplication factor a test data generator which produces test data on the basis of data control signals received from the external test unit and outputs them to a data output driver a first signal delay circuit for delaying the test data which are output by the test data generator by an adjustable first delay time, a second signal delay circuit for delaying data which are read out of the synchronous memory circuit and are received by a data input driver in the test circuit by an adjustable second delay time, and having a data comparison circuit which compares the test data produced by the test data generator with the data read out of the memory circuit and, on the basis of the comparison result, outputs an indicator signal to the external test unit which indicates whether the synchronous memory circuit to be tested is operable.
申请公布号 US7117404(B2) 申请公布日期 2006.10.03
申请号 US20020106414 申请日期 2002.03.26
申请人 INFINEON TECHNOLOGIES AG 发明人 ERNST WOLFGANG;KRAUSE GUNNAR;KUHN JUSTUS;LUEPKE JENS;POECHMUELLER PETER;MUELLER JOCHEN;SCHITTENHELM MICHAEL
分类号 G01R31/28;G11C29/00;G11C29/48;G11C29/56 主分类号 G01R31/28
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