| 发明名称 |
Termination for SiC trench devices |
| 摘要 |
A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.
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| 申请公布号 |
US2006214242(A1) |
申请公布日期 |
2006.09.28 |
| 申请号 |
US20060365291 |
申请日期 |
2006.03.01 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
CARTA ROSSANO;BELLEMO LAURA |
| 分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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