| 摘要 |
<p>An organic thin film transistor is provided with a source electrode and a drain electrode separately arranged; an organic semiconductor film between the source electrode and the drain electrode; and a gate electrode arranged to face the organic semiconductor film between the source electrode and the drain electrode through a gate insulating film. The gate insulating film has a recessed section in the vicinity of the gate electrode, and the end sections of the source electrode and the drain electrode are arranged to face each other on side planes of the recessed section.</p> |
