| 摘要 |
PROBLEM TO BE SOLVED: To etch a silicon insulating film without rate variations in a chamber polluted with a nickel metal. SOLUTION: A method of forming a semiconductor device includes a step of forming a nickel silicide thin film 4b on a silicon substrate 4a, a step of forming a silicon nitride thin film 4c and an anti-reflective coating 4d on the nickel silicide thin film 4b, a step of forming a resist pattern at the photoresist 4e of the anti-reflective coatings 4d, a step of selectively removing the anti-reflective coatings 4d, and a step of selectively removing the silicon nitride thin film 4c and the nickel silicide thin film 4b by etching using a resist pattern as a mask in the chamber. The etching is performed using a gas containing a chlorine gas. COPYRIGHT: (C)2006,JPO&NCIPI
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