发明名称 |
Ion implanting apparatus and ion implanting method using the same |
摘要 |
In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.
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申请公布号 |
US7112810(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20040964735 |
申请日期 |
2004.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KEUM GYEONG-SU;CHAE SEUNG-KI;HONG HYUNG-SIK;CHA SANG-YEOB;HAN JAE-HYUN;IM TAE-SUB;KANG HYUN-KYU;YUN GIL-JUNG;SONG DOO-GUEN |
分类号 |
H01J37/08;H01J37/244;H01J37/304;H01J37/317;H01L21/265 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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