| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting device suppressing variation of angles in a wafer surface at which a wafer is irradiated with an ion beam, and an ion implanting method. SOLUTION: This ion implanting device is equipped with a rotary disc 50 having a mounting part 51 for mounting wafers W1-W 8 and an angle adjusting mechanism 53 to adjust a cone angleθc made by a support part 52 for mounting the mounting part 51 and the support part 52, a detector 40 to detect a tilt angleθt made by the traveling direction of the ion beam 100 irradiating the wafers W1-W8 and the normal direction 200 of the wafers W1-W8, and an angle control device 70 to control the angle adjusting mechanism 53 based on the tilt angleθt. COPYRIGHT: (C)2006,JPO&NCIPI
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