| 摘要 |
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {101 1 } gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) { 1013 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) { 1122 } gallium nitride (GaN) grown on a { 1 100 } sapphire substrate, and (4) { 1013 } gallium nitride (GaN) grown on a { 1 1 00 } sapphire substrate. |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;BAKER, TROY, J.;HASKELL, BENJAMIN, A.;FINI, PAUL, T.;DENBAARS, STEVEN, P.;SPECK, JAMES, S.;NAKAMURA, SHUJI |
发明人 |
BAKER, TROY, J.;HASKELL, BENJAMIN, A.;FINI, PAUL, T.;DENBAARS, STEVEN, P.;SPECK, JAMES, S.;NAKAMURA, SHUJI |
