ANTIREFLECTIVE COATING FOR SEMICONDUCTOR DEVICES AND METHOD FOR THE SAME

摘要

According to one embodiment of the invention, a semiconductor device (200) includes a first layer of dielectric material (208) disposed upon an upper surface of a substrate (226) of a semiconductor device and a first non-conductive layer of metal (206) disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.