发明名称 TRENCH FORMATION METHOD, PATTERN OF FILLER, METHOD FOR FORMING THE SAME AND DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a trench formation method by which a trench of which inclination angles of its right and left side walls are different from each other can be formed, a method for forming the pattern of a filler of which inclination angles of its two side walls are different from each other, a pattern of the filler, and a device using them. SOLUTION: The trench formation method is used to etch a part of a film 10 to be etched that is formed on a substrate 1 and to form a trench. The method includes a step to form a dry etching mask 30 on the film 10 that is provided with an opening 35 corresponding to the trench, and a step to etch the film 10 using the dry etching mask 30 as a mask so as to form a trench. The inclination anglesθDL andθDR of two side walls 35L and 35R facing each other with the opening 35 in-between are different from each other in the dry etching mask 30. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006253319(A) 申请公布日期 2006.09.21
申请号 JP20050066034 申请日期 2005.03.09
申请人 TDK CORP 发明人 TANITSU HIDEYUKI;UEJIMA SATOSHI;HADATE HITOSHI;KAJI RINA;HARADA TATSUYA
分类号 H01L21/3065;G03F7/40;G11B5/31;H01L43/08 主分类号 H01L21/3065
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