SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a semiconductor layer on an insulator inexpensively while suppressing the generation of particles from the semiconductor layer. SOLUTION: After a trench 8a for exposing the sidewall of a second semiconductor layer 3 is formed, the sidewall of the second semiconductor layer 3 is heat treated under N2gas atmosphere to form a protective film 30 on the sidewall of a second semiconductor layer 3. A trench 8b for exposing a portion of a first semiconductor layer 2 is formed by etching the first semiconductor layer 2 while digging the trench 8a, and a cavity 9 is formed between a semiconductor substrate 1 and the second semiconductor layer 3 by touching etching liquid to the first semiconductor layer 2 through the trenches 8a and 8b and removing the first semiconductor layer 2 by etching. COPYRIGHT: (C)2006,JPO&NCIPI