| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a compound semiconductor crystal for light emitting devices which can reduce a memory effect without carrying out a dummy growth and can raise device property as the result. SOLUTION: Group III and group V material gases, doping materials and carrier gas are supplied on a heated substrate, and a vapor phase epitaxy of the compound semiconductor crystal is performed on the substrate. Consequently, in a compound semiconductor crystal for the semiconductor light emitting devices which performs the sequential lamination of at least n-type cladding layer 3, an activity layer 4, a p-type cladding layer 5 and a p-type cap layer 6 doped with Zn on an n-type substrate 1, it considers as a structure which carried out at least the one-layer lamination of the Zn memory effect reduction layer which consists of a compound semiconductor crystal further on the above p-type cap layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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