发明名称 METHOD OF MANUFACTURING PIEZOELECTRIC RESONANCE ELEMENT AND PIEZOELECTRIC RESONANCE ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric resonance element and the piezoelectric resonance element in which cracking in a piezoelectric layer caused by a step of the background is prevented. <P>SOLUTION: The method of manufacturing a piezoelectric resonance element and the piezoelectric resonance element is characterized in that in the state where a sacrifice layer 21 patterned on a substrate 11 is covered, a lower electrode film 13' is formed on the substrate 11, and a resist pattern 41 constituted only of an angular part41 A with a round outer form and a straight line is then formed in an area including the lower electrode film 13' on the sacrifice layer 21. Next, reflow treatment is applied to the resist pattern 31, thereby an outer side wall 41a of the resist pattern 41 is tapered, the lower electrode film 13' is etched from the surface of the resist pattern 41, thereby forming a lower electrode 13, and the resist pattern 41 is removed. Then, the piezoelectric layer and an upper electrode are sequentially formed on the substrate 11 in the state where the lower electrode 13 is covered and the sacrifice layer 21 is removed, thereby forming an air layer between the substrate 11 and the lower electrode 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006254295(A) 申请公布日期 2006.09.21
申请号 JP20050070824 申请日期 2005.03.14
申请人 SONY CORP 发明人 OKA SHUICHI
分类号 H03H3/02;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/29;H03H9/17 主分类号 H03H3/02
代理机构 代理人
主权项
地址