| 摘要 |
<p>The device has a semiconductor substrate including a set of active regions separated by a set of trenches in the semiconductor substrate. A gate insulation film is formed over the semiconductor substrate, where a portion of the gate insulation film fills a portion of the trenches. A conductive gate film (60) is formed over the gate insulation film, and a metal film (70) generates a high potential barrier between the conductive gate film and a blocking insulation film. An independent claim is also included for a method of fabricating a semiconductor memory device.</p> |
