| 摘要 |
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably via an exchange coupling. The free layer is switched using spin transfer when a write current is passed through the magnetic element. The write current preferably provides heat that reduces the heat assisted switching layer's stabilization of the free layer. In another aspect, the magnetic element also includes second free, a second spacer, and second pinned layers. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled.
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