发明名称 |
Polarization-reversed III-nitride light emitting device |
摘要 |
A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
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申请公布号 |
US2006202215(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20050080022 |
申请日期 |
2005.03.14 |
申请人 |
LUMILEDS LIGHTING U.S., LLC |
发明人 |
WIERER JONATHAN J.JR.;CRAFORD M. G.;EPLER JOHN E.;KRAMES MICHAEL R. |
分类号 |
H01L33/00;H01L33/16;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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