| 摘要 |
PROBLEM TO BE SOLVED: To provide a full silicide field effect transistor capable of being manufactured through silicide process of one time and provided with small source and drain resistance. SOLUTION: The upper surfaces of a source electrode 11 and a drain electrode 12 are formed so as to be higher than the upper surface of a silicide gate electrode 2. The silicide gate electrode 2 is formed through diffusion of a metal into a silicon gate electrode 2a while the source electrode 11 and the drain electrode 12 are formed through the diffusion of metal into silicon layers 11a, 12a thicker than the silicon gate electrode 2a. The source electrode 11 and the drain electrode 12 are higher than the gate electrode 2 whereby the silicide of gate electrode 2 is effected completely, even when the source electrode 11 and the drain electrode 12 are formed so as to stay in the shallow region of the semiconductor substrate 1 through the diffusion of metal from the upper surfaces thereof. Further, the source and drain electrodes are shallow and, therefore, a contact resistance is small. COPYRIGHT: (C)2006,JPO&NCIPI
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