METHOD OF MANUFACTURING SEMICONDUCTOR USING MULTICHARGED ION

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor using multicharged ion which can obtain an extremely quick etching rate by utilizing a multiple valued ion beam for exposure in an exposure irradiation process in a lithography process which manufactures the semiconductor. SOLUTION: The method of manufacturing the semiconductor utilizes the multiple valued ion beam in the lithography process in the semiconductor manufacturing process. In the exposure irradiation process in the lithography process, the multiple valued ion beam is irradiated to a test piece for forming the semiconductor. COPYRIGHT: (C)2006,JPO&NCIPI