| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element with a vertical structure for preventing shielding by wire-bonding, by forming a bonding pad of an n-side electrode, which is formed on an upper face of an n-type nitride semiconductor layer as a light emitting face of the nitride semiconductor light emitting element with a vertical structure, in an adjoining position to an upper face edge of the n-type nitride semiconductor layer, and for preventing concentration phenomenon of current density, by forming an extending electrode with various structures from the bonding pad. <P>SOLUTION: The nitride semiconductor light emitting element with vertical structure includes an n-type nitride semiconductor layer; an active layer formed on a lower face of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on a lower face of the active layer; a bonding pad formed in an adjoining position to an upper face edge of the ni-type nitride semiconductor layer; and an N-side electrode including two or more belt-shaped extending electrode, which is extending from the bonding pad. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
