MEMORY APPARATUS, ITS PERFORMANCE, AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a memory apparatus comprising external magnetic field generating means, its performance, and manufacturing method. SOLUTION: The invention comprises magnetic memory means comprising an MTJ cell 42, a transistor, and a bit line 44, and magnetic field generating means which is provided on the exterior of the magnetic memory means and which is for generating a global magnetic field in parallel with a bit line toward the magnetic memory means. COPYRIGHT: (C)2006,JPO&NCIPI