| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon thin-film transistor wherein the degree of the movement of a carrier of a channel region becomes the maximum, and which is formed on a substrate made of arbitrary substances containing soda glass. SOLUTION: The single-crystal silicon thin-film transistor has a single crystal in which the direction pf the crystallization of a silicon thin-film formed on the substrate on which an amorphous silicon thin-film can be deposited is parallel with the surface of the substrate. In the single-crystal silicon thin film in the single-crystal silicon thin-film transistor of, a neutral Ne beam is radiated at low energy capable of controlling a crystal direction to the substrate on which an amorphous silicon thin film is deposited which is perpendicular to the substrate respectively at an angle of nearly 54.7°from both directions, without causing sputtering to the amorphous silicone thin film, and it is heated in the irradiation region of the neutral Ne beam at a high temperature lower than the fusion temperature of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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