发明名称 |
FILM FORMING PROCESS METHOD |
摘要 |
A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16).
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申请公布号 |
KR20060097070(A) |
申请公布日期 |
2006.09.13 |
申请号 |
KR20067016824 |
申请日期 |
2006.08.22 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
WAKABAYASHI SATOSHI;OKABE SHINYA;MURAKAMI SEISHI;MORISHIMA MASATO;TADA KUNIHIRO |
分类号 |
C23C16/44;H01L21/205;C23C16/458;C23C16/46;H01L21/00;H01L21/02;H01L21/285 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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