Magnetoresistive solid-state storage device and data storage methods for use therewith

摘要

A magnetoresistive solid-state storage device (MRAM device) uses storage cells 16 arranged in many arrays 10 to form a macro-array 2. For fast access times and to reduce exposure to physical failures, each unit of data (e.g. a sector) is stored with a few sub-units (e.g. bytes) in each of a large plurality of the arrays 10. Advantageously, the plurality of arrays 10 are accessible in parallel substantially simultaneously, and a failure in any one array affects only a small portion of the data unit. Optionally, error correction coding (ECC) is employed to form encoded data with symbols which are stored according to preferred embodiments which further minimise exposure to physical failures.