| 发明名称 |
Write line design in MRAM |
| 摘要 |
A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.
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| 申请公布号 |
US7105879(B2) |
申请公布日期 |
2006.09.12 |
| 申请号 |
US20040827769 |
申请日期 |
2004.04.20 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN WEN CHIN;TANG DENNY;LAI LI-SHYUE;WANG CHAO-HSIUNG |
| 分类号 |
G11C11/15;H01L29/76;G01F1/00;G11C5/06;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
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