| 摘要 |
The method for fabricating the semiconductor device comprises: the step of forming a ferroelectric capacitor over a semiconductor substrate 10; the step of forming an insulating film 54, covering the ferroelectric capacitor; the step of processing thermal treatment to eliminate hydrogen and/or water adsorbed on a surface of the insulating film 54 or occluded in the insulating film 54; and the step of forming a capacitor protective film 56 of an aluminum oxide film over the insulating film 54. The step of processing the thermal treatment and the step of forming the capacitor protective film are performed continuously in the same system without exposing to an ambient atmosphere.
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