发明名称 |
METHOD FOR FORMING SUSPENDED TRANSMISSION LINE STRUCTURES IN BACK END OF LINE PROCESSING |
摘要 |
A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.
|
申请公布号 |
US2006197119(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20050164765 |
申请日期 |
2005.12.05 |
申请人 |
|
发明人 |
CHINTHAKINDI ANIL K.;GROVES ROBERT A.;TRETIAKOV YOURI V.;VAED KUNAL;VOLANT RICHARD P. |
分类号 |
H01L29/80;H01L21/4763;H01L21/768;H01L23/522;H01L23/532;H01P11/00 |
主分类号 |
H01L29/80 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|