发明名称 |
Semiconductor device and a method of manufacturing the same |
摘要 |
A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.
|
申请公布号 |
US2006199323(A1) |
申请公布日期 |
2006.09.07 |
申请号 |
US20060411892 |
申请日期 |
2006.04.27 |
申请人 |
MITSUDA KATSUHIRO;HONDA MITSUHARU;IIZUKA AKIRA |
发明人 |
MITSUDA KATSUHIRO;HONDA MITSUHARU;IIZUKA AKIRA |
分类号 |
H01L21/28;H01L21/8234;H01L21/265;H01L21/266;H01L21/306;H01L21/324;H01L21/336;H01L21/8238;H01L21/8242;H01L27/092;H01L27/108;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|