| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic device with improved output characteristics. <P>SOLUTION: An i-type amorphous silicon film 21 and an n-type amorphous silicon film 22 are formed on a region except a predetermined width on an outer periphery of a principal plane of an n-type monocrystalline silicon substrate 11. A surface electrode 12 is formed to cover the films 21 and 22 on the principal plane of the n-type silicon substrate 11. An i-type amorphous silicon film 23 and a p-type amorphous silicon film 24 are formed entirely on the rear of the n-type substrate 11. A rear electrode 16 is formed on a region except a predetermined width on an outer periphery of the silicon film 24. The side of the surface electrode 12 serves as a main light receiving surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
