| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protective element acquiring sufficient durability without increasing an element in size, and also to provide a semiconductor device, with respect to the electrostatic protective element for protecting a circuit from electrostatic, and the semiconductor device having the element mounted thereon. SOLUTION: This semiconductor device has electrostatic protective elements (11, 12) for turning on a PN junction to discharge electricity to protect an internal circuit (13). In this device, each electrostatic protective element (11, 12:200) has a p-type embedding layer (214) formed on the lower part of an n-type epitaxial layer (212) and a p-type diffusion layer (215) formed so as to coupled from the surface portion of the n-type epitaxial layer (212) to the p-type embedding layer (214). The PN junction is characteristically formed on a joining surface among the p-type embedding layers (214), the p-type diffusion layer (215) and the n-type epitaxial layer (212). COPYRIGHT: (C)2006,JPO&NCIPI
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