| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for synthesizing a diamond free from defects, especially a diamond having surely improved n-type semiconductor characteristics by a CVD process. SOLUTION: In the method for synthesizing a diamond thin film by a plasma CVD process, a defect-free, high quality diamond thin film, especially, a defect-free, n-type diamond thin film is formed by etching a diamond substrate with reactive ions, and then performing the CVD process comprising supplying a raw material gas containing a carbon source or further, an n-type dope source containing phosphorus onto the etched surface and decomposing/depositing the raw material gas by plasma. COPYRIGHT: (C)2006,JPO&NCIPI
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