发明名称 Predistorter for power amplifier
摘要 A predistorter that linearizes the nonlinearity of a power amplifier in a system supporting a multimode and a multiband (frequency band). The predistorter includes a field-effect transistor, an impedance transform unit, a first inductor, a first capacitor, and a second capacitor. The field-effect transistor has a source connected to the ground and uses a variable gate bias voltage. The impedance transform unit is connected to a drain of the field-effect transistor to perform impedance transform. The first inductor is connected between the impedance transform unit and a voltage provided to the field-effect transistor. The first capacitor is connected between a power input terminal and the impedance transform unit. The second capacitor is connected between a power output terminal and the impedance transform unit.
申请公布号 US2006197595(A1) 申请公布日期 2006.09.07
申请号 US20050185107 申请日期 2005.07.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG HYUN-II;KIM YOUNG-HWAN;LEE JAE-SUP;WOO SANG-HYUN
分类号 H03F1/26 主分类号 H03F1/26
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