SEMICONDUCTOR DEVICE FABRICATED ON SURFACE OF SILICON HAVING ?110? DIRECTION OF CRYSTAL PLANE AND ITS PRODUCTION METHOD

摘要

In a semiconductor device in which a plurality of field effect transistors are formed on a silicon surface having substantially a <110> orientation, the field effect transistors are disposed on the silicon surface such that a direction connecting a source region and a drain region of the field effect transistor is coincident to a substantially <110> direction.