INTEGRATED CIRCUIT ARRANGEMENT COMPRISING A FIELD EFFECT TRANSISTOR, ESPECIALLY A TUNNEL FIELD EFFECT TRANSISTOR

摘要

The invention relates to an integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. The invention also relates to tunnel field effect transistors that have a thicker gate dielectric (GDI) compared to other transistors (T2) on the same integrated circuit arrangement (10). Alternatively or additionally, said tunnel field effect transistors have gate regions on opposing sides of a channel formation region or a boundary surface between the connection regions (Dl, Sl) of the tunnel field effect transistors.