HALBLEITERVORRICHTUNG AUS EINER NITRIDVERBINDUNG

摘要

A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3 x 10<18> cm<-3>, and the resistivity can be lowered below 8 x 10<-3> OMEGA cm.