发明名称 Single event effect (SEE) tolerant circuit design strategy for SOI type technology
摘要 A method of designing an integrated circuit to be Single Event Upset (SEU) immune by converting one or more Single Event Transient (SET) sensitive transistors into at least two serially connected transistors, and spacing the transistors sufficiently far apart so that the probability of a specified high-energy particle striking both transistors at the same time is remote.
申请公布号 US2006187700(A1) 申请公布日期 2006.08.24
申请号 US20060350673 申请日期 2006.02.08
申请人 IOTA TECHNOLOGY, INC. 发明人 HO IU-MENG T.
分类号 G11C11/22 主分类号 G11C11/22
代理机构 代理人
主权项
地址