| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor capable of acquiring excellent characteristics even in the case of low temperature, and to provide a manufacturing method of a semiconductor device using it. <P>SOLUTION: At the time of forming a nitride semiconductor 12 by using an MOCVD method, an MBE method or an MOMBE method, such a halogenated nitrogen gas as NF<SB>3</SB>is used as a material of nitrogen. Since the halogenated nitrogen gas has high decomposition efficiency even in low temperature of 800°C or less, nitrogen can sufficiently be supplied even if the temperature at the time of formation is made low. Therefore, excellent characteristics can be acquired without causing the shortage of nitrogen even at low temperature, at the time of forming such an object whose degradation due to heat is large as the nitride semiconductor 12 containing In. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
