发明名称 |
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR VOLTAGE CONTROLLED OSCILLATOR |
摘要 |
A complementary metal oxide semiconductor voltage controlled oscillator is provided. The voltage controlled oscillator includes an LC tank which is supplied with a power supply voltage, the LC tank oscillating at a certain frequency; a negative resistor including first and second N-channel metal oxide semiconductor field effect transistors (NMOS FETs) to sustain the oscillation of the LC tank; a direct current block to remove a direct current component from the power supply voltage; an alternating current block to apply an alternating current voltage to the gates of the first and second NMOS FETs; a first current mirror including third and fourth NMOS FETs and allowing a current to symmetrically flow in the voltage controlled oscillator, a drain and the gate of the third NMOS FET being connected to a reference voltage supply; and the reference voltage supply applying a direct current voltage to the first current mirror. |
申请公布号 |
KR20060092695(A) |
申请公布日期 |
2006.08.23 |
申请号 |
KR20050013772 |
申请日期 |
2005.02.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, HEUNG BAE;JUNG, SUNG JAE;JEON, SANG YOON |
分类号 |
H03B5/12 |
主分类号 |
H03B5/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|