发明名称 |
METHOD FOR REDUCING DEFECT CONCENTRATIONS IN CRYSTALS |
摘要 |
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal. <IMAGE> |
申请公布号 |
KR20060092180(A) |
申请公布日期 |
2006.08.22 |
申请号 |
KR20060071243 |
申请日期 |
2006.07.28 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
D'EVELYN MARK PHILIP;ARTHUR STEPHEN DALEY;ROWLAND LARRY BURTON;VAGARALLI SURESH SHANKARAPPA;LUCEK JOHN WILLIAM;ANTHONY THOMAS RICHARD;LEVINSON LIONEL MONTY |
分类号 |
B01J3/06;C30B33/02;C30B1/00;C30B33/00;H01L21/324 |
主分类号 |
B01J3/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|