发明名称 METHOD FOR REDUCING DEFECT CONCENTRATIONS IN CRYSTALS
摘要 A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal. <IMAGE>
申请公布号 KR20060092180(A) 申请公布日期 2006.08.22
申请号 KR20060071243 申请日期 2006.07.28
申请人 GENERAL ELECTRIC COMPANY 发明人 D'EVELYN MARK PHILIP;ARTHUR STEPHEN DALEY;ROWLAND LARRY BURTON;VAGARALLI SURESH SHANKARAPPA;LUCEK JOHN WILLIAM;ANTHONY THOMAS RICHARD;LEVINSON LIONEL MONTY
分类号 B01J3/06;C30B33/02;C30B1/00;C30B33/00;H01L21/324 主分类号 B01J3/06
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