| 摘要 |
Disclosed herein is a semiconductive chip device having an insulating coating layer, which includes a multi-crystalline semiconductive chip requiring surface insulation properties, outer electrodes formed at both ends of the semiconductive chip, and an insulating coating layer formed by fusing glass powder to a silane coupling agent on the surface of the semiconductive chip. In addition, a method of manufacturing the semiconductive chip device having an insulating coating layer is provided, which comprises: preparing a multi-crystalline semiconductive chip requiring surface insulation properties, and etching the multi-crystalline semiconductive chip; dipping the etched semiconductive chip into a silane coupling solution, and removing the aqueous component from the solution attached to the surface of the semiconductive chip; attaching glass powder to the surface of the semiconductive chip having no aqueous component, and primarily heat treating the semiconductive chip; and forming outer electrodes on the primarily heat treated semiconductive chip, and, secondarily heat treating the semiconductive chip, thereby forming the insulating coating layer on the surface of the semiconductive chip. |
